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| SUM75N15-18P Vishay Siliconix N-Channel 150-V (D-S) MOSFET PRODUCT SUMMARY V(BR)DSS (V) 150 RDS(on) () 0.018 at VGS = 10 V ID (A) 75d Qg (Typ.) 64 FEATURES * TrenchFET(R) Power MOSFET * 100 % Rg and UIS Tested RoHS COMPLIANT APPLICATIONS * Primary Side Switch * Power Supplies TO-263 D G G DS S Ordering Information: SUM75N15-18P-E3 (Lead (Pb)-free) N-Channel MOSFET Top View ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 C) Pulsed Drain Current Avalanche Current Single Avalanche Energya Maximum Power Dissipationa Operating Junction and Storage Temperature Range L = 0.1 mH TC = 25 C TA = 25 Cc TC = 25 C TC = 70 C Symbol VDS VGS ID IDM IAS EAS PD TJ, Tstg Limit 150 20 75d 70 180 50 125 312.5 3.12 - 55 to 150 b Unit V A mJ W C THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient (PCB Mount) Junction-to-Case (Drain) Notes: a. Duty cycle 1 %. b. See SOA curve for voltage derating. c. When Mounted on 1" square PCB (FR-4 material). d. Package limited. c Symbol RthJA RthJC Limit 40 0.4 Unit C/W Document Number: 69995 S-82349-Rev. B, 22-Sep-08 www.vishay.com 1 SUM75N15-18P Vishay Siliconix SPECIFICATIONS TJ = 25 C, unless otherwise noted Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Dynamicb Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Chargec Gate-Source Charge Gate-Drain Chargec Gate Resistance Turn-On Delay Timec Rise Timec Turn-Off Delay Time Fall Timec Continuous Current Pulsed Current Forward Voltagea Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge c c Symbol V(BR)DSS VGS(th) IGSS IDSS ID(on) RDS(on) gfs Ciss Coss Crss Qg Qgs Qgd Rg td(on) tr td(off) tf Cb IS ISM VSD trr IRM(REC) Qrr Test Conditions VDS = 0 V, ID = 250 A VDS = VGS, ID = 250 A VDS = 0 V, VGS = 20 V VDS = 150 V, VGS = 0 V VDS = 150 V, VGS = 0 V, TJ = 125 C VDS = 150 V, VGS = 0 V, TJ = 150 C VDS 10 V, VGS = 10 V VGS = 10 V, ID = 20 A VGS = 10 V, ID = 20 A, TJ = 125 C VDS = 15 V, ID = 20 A Min. 150 2.5 Typ. Max. Unit 4.5 250 1 50 250 V nA A A 120 0.0148 0.0296 55 4180 0.018 0.036 S VGS = 0 V, VDS = 75 V, f = 1 MHz 235 83 64 100 pF VDS = 75 V, VGS = 10 V, ID = 85 A f = 1 MHz VDD = 75 V, RL = 0.88 ID 85 A, VGEN = 10 V, Rg = 1 23 16 2.1 15 10 25 8 4.2 25 15 40 15 nC ns Source-Drain Diode Ratings and Characteristics TC = 25 75 180 IF = 30 A, VGS = 0 V IF = 50 A, dI/dt = 100 A/s 1.0 130 8 520 1.5 200 12 1200 A V ns A nC Notes: a. Pulse test; pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 69995 S-82349-Rev. B, 22-Sep-08 SUM75N15-18P Vishay Siliconix TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 180 VGS = 10 thru 7 V 150 I D - Drain Current (A) I D - Drain Current (A) 50 60 120 VGS = 6 V 90 40 30 TC = 25 C 20 TC = 125 C TC = - 55 C 60 30 VGS = 5 V 10 0 0 1 2 3 4 5 0 0 2 4 6 8 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics 100 TC = - 55 C RDS(on) - On-Resistance () g fs - Transconductance (S) 80 0.04 Transfer Characteristics 0.03 60 TC = 25 C 40 TC = 125 C 0.02 VGS = 10 V 0.01 20 0 0 8 16 24 32 40 0.00 0 20 40 60 80 100 120 ID - Drain Current (A) ID - Drain Current (A) Transconductance 0.10 ID = 20 A R DS(on) - On-Resistance () 0.08 C - Capacitance (pF) 5000 6000 On-Resistance vs. Drain Current Ciss 4000 0.06 3000 0.04 TA = 150 C 2000 Coss Crss 0 10 20 30 40 0.02 TA = 25 C 0.00 0 2 4 6 8 10 1000 0 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage Capacitance Document Number: 69995 S-82349-Rev. B, 22-Sep-08 www.vishay.com 3 SUM75N15-18P Vishay Siliconix TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 10 ID = 85 A VGS - Gate-to-Source Voltage (V) 8 VDS = 75 V 6 VDS = 120 V R DS(on) - On-Resistance 2.0 (Normalized) VGS = 10 V 1.5 2.5 ID = 20 A 4 1.0 2 0 0 20 40 60 80 0.5 - 50 - 25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (C) Gate Charge 0.8 Drain-Source Breakdown Voltage (V) 190 On-Resistance vs. Junction Temperature ID = 1 mA 180 0.2 V GS(th) Variance (V) 170 - 0.4 ID = 1 mA - 1.0 ID = 250 A - 1.6 - 50 160 150 - 25 0 25 50 75 100 125 150 140 - 50 - 25 0 25 50 75 100 125 150 TJ - Temperature (C) TJ - Temperature (C) Threshold Voltage 100 TJ = 150 C 10 I S - Source Current (A) I D - Drain Current (A) TJ = 25 C 1 Drain-Source Breakdown vs. Junction Temperature 1000 Limited by RDS(on)* 10 s 100 100 s 10 1 ms 10 ms 100 ms, DC 0.1 1 0.01 0.1 TC = 25 C Single Pulse 0.001 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.01 0.1 1.0 10 100 1000 VSD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which R DS(on) is specified Safe Operating Area, Junction-to-Case www.vishay.com 4 Document Number: 69995 S-82349-Rev. B, 22-Sep-08 SUM75N15-18P Vishay Siliconix TYPICAL CHARACTERISTICS 100 25 C, unless otherwise noted 400 350 80 I D - Drain Current (A) 300 Package Limited Power (W) 60 250 200 150 100 20 50 0 0 25 50 75 100 125 150 0 0 25 50 75 100 125 150 40 TC - Case Temperature (C) TJ - Temperature (C) Current Derating*, Junction-to-Case 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance Power Derating*, Junction-to-Case 0.2 0.1 0.1 0.02 Single Pulse 0.05 0.01 10 -4 10 -3 10 -2 Square Wave Pulse Duration (s) 10 -1 1 Normalized Thermal Transient Impedance, Junction-to-Case * The power dissipation PD is based on TJ(max) = 150 C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?69995. Document Number: 69995 S-82349-Rev. B, 22-Sep-08 www.vishay.com 5 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1 |
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